Study of Self-Accelerating Switching in MTJs with Composite Free Layer by Micromagnetic Simulations
نویسندگان
چکیده
We analyze the peculiarities of the magnetic dynamics of MTJs with a composite free layer. The composite magnetic layer consists of two half-ellipses separated by a non-magnetic spacer. We show that the switching barrier in these MTJs becomes practically equal to the thermal stability barrier. We investigate the dependence of the switching time and thermal stability on the geometry of these MTJs. The physical reasons for the distribution of the switching times narrowing in penta-layer MTJs with a composite free layer are revealed. Keywords-MTJ; micromagnetic modeling; STT-MRAM; composite free layer
منابع مشابه
Structural optimization of MTJs with a composite free layer [8813-95]
We investigate the switching statistics dependence on cell geometry by means of systematic micromagnetic simulations. We find that MTJs with a free layer composed of two ellipses with the axes a/2 and b inscribed into a rectangle a × b are characterized by the same switching speed and thermal stability as MTJs with a composite free layer (C-MTJs). As has been shown, the C-MTJs demonstrate a sub...
متن کاملComposite magnetic tunnel junctions for fast memory devices and efficient spin-torque nano-oscillators
We investigate a possibility to use composite magnetic tunnel junction structures (MTJs) to compose fast memory devices and efficient spin-torque nano-oscillators. In terms of magnetic memory, we study the switching statistics dependence on memory cell geometry by means of systematic micromagnetic simulations. We find that MTJs with a free layer composed of two ellipses with the axes a/2 > b in...
متن کاملBias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer: Micromagnetic Modeling
New types of spintronics devices utilizing all-electrical magnetization manipulation by current, such as spin-torque transfer RAM and spin-torque oscillators, have been developed based on MgO magnetic tunnel junctions (MTJs) [1]. Spin-torque oscillators based on MTJs with in-plane magnetization [2] show high frequency capabilities, but still need an external magnetic field and are characterized...
متن کاملEfficient High-Frequency Spin-Torque Oscillators Composed of Two Three-Layer MgO-MTJs with a Common Free Layer
We present a novel spin-torque oscillator based on two three-layer MgO-MTJs with a shared free layer. By performing extensive micromagnetic simulations we found that the structure exhibits a wide tunability of oscillation frequencies from a few GHz to several tens of GHz. We discuss the optimization of such structures in order to obtain the maximum output power. Keywords—spin-torque; oscillator...
متن کاملGeometry Optimization of Spin-Torque Oscillators Composed of Two MgO-MTJs with a Shared Free Layer
New types of spintronics devices utilizing all-electrical magnetization manipulation by current, such as spin-torque transfer RAM and spin-torque oscillators, have been developed based on MgO magnetic tunnel junctions (MTJs) with a large magneto-resistance ratio [1]. Spin-torque oscillators based on a single MTJ with in-plane magnetization [2] show high frequency capabilities, but still need an...
متن کامل